Contacts: Nini Pryds, (nipr@ dtu.dk) tel.: 46775752, and Vincenzo Esposito (vies@dtu.dk) DTU Energy, Functional-Electronic Materials (EFM).
The three fundamental passive elements – the resistor, the capacitor and the inductor - are currently used to build electronic circuits. The fourth fundamental circuit element called memristor has recently emerged. Memristor is a component that changes its electric resistance upon the application of an electric field, keeping (i.e. “remembering”) the new resistance once the electric field is switched off. Memristors typically consist of a nanometric thin oxide film sandwiched between two metal electrodes, which under applied electric fields produce resistive switching. When compared to existing (flash) and other emerging memory technologies such as ferroelectric, magneto-resistive and phase-change random-access memory (FeRAM, MRAM and PCRAM) memristors are the most promising candidates as the next generation of non-volatile memory due to their desirable properties: a simple structure, fast switching speed, high stacking density, low power consumption, high scalability, and an unproblematic fabrication process.
Challenges: Despite the potential advantages of the memristors, progress toward application is still hindered due to the luck of suitable materials to be used in memory device.
The targeted in this work, is for you to prepare a thin film of oxide materials produce at room temperature. The materials to be fabricated is perovskite oxide (amorphous SrTiO3: a-STO) thin film which is a promising memory materials for future application. The materials will be fabricated and characterized with regards to its switching ability by controlling the amount of oxygen in the material. We also targeting that in the end of the project you will take part in writing short article on the material fabrication and switching behaviour.