Contacts:
Daniel Chastanet (dacha@fotonik.dtu.dk, office B345v/270/ +33650723071)
Nika Akopian (nikaak@fotonik.dtu.dk, office B345v/271)
This project aims at processing crystal phase quantum dots in nanowires to propose new device designs for quantum photonic applications. This will be done using our state of the art clean room facility.
Crystal phase quantum dots consist of small segments of zinc blend in wurtzite nanowire (see fig 1) with atomically sharp interfaces. This unique advantage compare to other quantum dots combined with the removal of all issues linked with material composition/diffusion/geometry allow the production of device with precise controlled optical properties and uniformity. This would represent a major milestone, yet to be demonstrated, for communication and computation technologies exploiting quantum mechanical phenomena, such as quantum cryptography or quantum network. This makes crystal phase QDs one of the most promising candidates as quantum bit building block.
In our team, we aim to develop these structures towards development of novel quantum devices using a Metalorganic vapour phase epitaxy (MOVPE) reactor. We are actually growing InP NWs by self-catalization on Si and InP wafers. To improve crystal purity and achieve phase switching, we are employing different strategies along with feedbacks from electronic microscopy and optical characterization.
In this project you will learn:
- Basic principles of quantum dots and applications in Quantum Information.
- Cleanroom growth (nanowires) and Nano-fabrication (e-beam/nano-imprint/PECVD/ICP).
- characterization (SEM, TEM).
More skills/knowledge will depend on the specifics of the project.
(a) Scanning electron microscope image of InP nanowires. (b) Transmission electron microscopy of one nanowire showing short segments of zinc blende (red) in a wurtzite (blue) nanowire. (c) A high resolution-transmission electron microscopy image of the zinc blende segment surrounded by wurtzite lattice.